A new idea was provided by the group-IV GeSn alloys for short-wave infrared light source compatible with CMOS due to the low cost integrated on the Si platform and can be transformed into direct bandgap alloy. More than 7. 1% Sn content or strain engineering is used to achieve the direct bandgap GeSn semiconductors and enhance the luminous efficiency of GeSn light-emitting devi... https://www.spidertattooz.com/OPI-Infinite-Shine-All-Your-Dreams-in-Vending-Machines-ISLT84-p27376/